Technical parameters/polarity: Dual P-Channel
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -2.20 A
Technical parameters/rated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3911DV-T1-E3
|
Vishay Intertechnology | 类似代替 | TSOP-6 |
Transistor MOSFET P-CH 20V 1.8A 6Pin TSOP T/R
|
||
SI3993CDV-T1-GE3
|
Vishay Semiconductor | 类似代替 | TSOP |
SI3993CDV-T1-GE3 Dual P-channel MOSFET Transistor, 2.3A, 30V, 6Pin TSOP
|
||
SI3993DV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET P-CH DUAL 30V 6-TSOP
|
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