Technical parameters/drain source resistance: 27 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/Input capacitance (Ciss): 860pF @10V(Vds)
Technical parameters/rated power (Max): 3.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3460BDV-T1-GE3
|
VISHAY | 类似代替 | TSOP-6 |
Trans MOSFET N-CH 20V 6.7A 6Pin TSOP T/R
|
||
SI3460BDV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET N-CH 20V 6.7A 6Pin TSOP T/R
|
||
SI3460BDV-T1-GE3
|
Vishay Semiconductor | 类似代替 | TSOP-6 |
Trans MOSFET N-CH 20V 6.7A 6Pin TSOP T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review