Technical parameters/drain source resistance: 0.004 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5.7 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 2071pF @15V(Vds)
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI9426DY
|
Vishay Semiconductor | 功能相似 |
MOSFET 20V 6A 2W
|
|||
SI9426DY
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 20V 6A 2W
|
||
SI9426DY
|
Fairchild | 功能相似 | SO-8 |
MOSFET 20V 6A 2W
|
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