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Model SI4204DY-T1-GE3
Description VISHAY SI4204DY-T1-GE3 Dual Field Effect Transistor, MOSFET, Dual N-channel, 19.8 A, 20 V, 0.0038 ohm, 10 V, 1 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
10.55  yuan 10.55yuan
5+:
$ 12.3435
50+:
$ 11.8160
200+:
$ 11.5206
500+:
$ 11.4468
1000+:
$ 11.3729
2500+:
$ 11.2885
5000+:
$ 11.2358
7500+:
$ 11.1830
Quantity
5+
50+
200+
500+
1000+
Price
$12.3435
$11.8160
$11.5206
$11.4468
$11.3729
Price $ 12.3435 $ 11.8160 $ 11.5206 $ 11.4468 $ 11.3729
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7904) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0038 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 3.25 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/rise time: 24 ns

Technical parameters/descent time: 13 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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