Technical parameters/drain source resistance: 0.015 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/rise time: 12 ns
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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