Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 19A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 5620pF @10V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4186DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 20V 35.8A 8SOIC
|
||
SI4186DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH 20V 35.8A 8SOIC
|
||
SI4398DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 20V 19A 8-SOIC
|
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