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Model SI4398DY-T1-E3
Description MOSFET 20V 25A 3.5W 2.8mohm @ 10V
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Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8472) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.6W (Ta)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 25.0 A

Technical parameters/Input capacitance (Ciss): 5620pF @10V(Vds)

Technical parameters/rated power (Max): 1.6 W

Technical parameters/dissipated power (Max): 1.6W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4186DY-T1-GE3 SI4186DY-T1-GE3 Vishay Semiconductor 功能相似 SOIC
MOSFET N-CH 20V 35.8A 8SOIC
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SI4186DY-T1-GE3 SI4186DY-T1-GE3 VISHAY 功能相似 SOIC-8
MOSFET N-CH 20V 35.8A 8SOIC
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SI4398DY-T1-GE3 SI4398DY-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 20V 19A 8-SOIC
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