Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.56W (Ta)
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/dissipated power (Max): 1.56W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4434DY-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET N-CH 250V 2.1A 8-SOIC
|
||
SI4434DY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET N-CH 250V 2.1A 8-SOIC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review