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Model SI4562DY-T1-E3
Description VISHAY SI4562DY-T1-E3 Field effect transistor, MOSFET, N-channel+P-channel, 20V, 7.1A-6.2A, SOIC-8, whole coil
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
11.3  yuan 11.3yuan
5+:
$ 13.2187
50+:
$ 12.6538
200+:
$ 12.3374
500+:
$ 12.2583
1000+:
$ 12.1792
2500+:
$ 12.0889
5000+:
$ 12.0324
7500+:
$ 11.9759
Quantity
5+
50+
200+
500+
1000+
Price
$13.2187
$12.6538
$12.3374
$12.2583
$12.1792
Price $ 13.2187 $ 12.6538 $ 12.3374 $ 12.2583 $ 12.1792
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4992) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.019 Ω

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 2 W

Technical parameters/threshold voltage: 0.6 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 7.10 A, 6.20 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4562DY-T1-GE3 SI4562DY-T1-GE3 Vishay Semiconductor 完全替代 SO-8
MOSFET N/P-CH 20V 8-SOIC
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