Technical parameters/dissipated power: 2W (Ta), 3.1W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 450pF @10V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta), 3.1W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4823DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET P-CH 20V 4.1A 8-SOIC
|
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