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Model SI4412ADY-T1-E3
Description Trans MOSFET N-CH 30V 5.8A 8Pin SOIC N T/R
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Brand: Vishay Semiconductor
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8043) Minimum order quantity(1)
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Technical parameters/drain source resistance: 20.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.50 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 8.00 A

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4412ADY-T1 SI4412ADY-T1 VISHAY 功能相似 SOIC
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SI4412ADY-T1-GE3 SI4412ADY-T1-GE3 Vishay Siliconix 完全替代 SOIC-8
MOSFET N-CH 30V 5.8A 8-SOIC
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