Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 3.9A/3.5A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Siliconix | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR SI4532DY 双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
|
||
SI4532DY
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR SI4532DY 双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
|
||
SI4532DY
|
Vishay Semiconductor | 功能相似 | SO |
FAIRCHILD SEMICONDUCTOR SI4532DY 双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
|
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