Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/Input capacitance (Ciss): 950pF @15V(Vds)
Technical parameters/rated power (Max): 2.9 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Last Time Buy
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 功能相似 | SOIC |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
||
SI4830ADY-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
|||
SI4830CDY-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOIC |
MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 5.7A; SO-8; PD 1.1W; VGS +/-20V; gFS 1
|
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