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Model SI4940DY-T1-E3
Description SOIC N-CH 40V 4.2A
Product QR code
Brand: VISHAY
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8088) Minimum order quantity(1)
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Technical parameters/drain source resistance: 36.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.10 W

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/leakage source breakdown voltage: 40.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 4.20 A

Technical parameters/rated power (Max): 1.1 W

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4940DY SI4940DY Vishay Semiconductor 功能相似 SO
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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