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Model SI4682DY-T1-GE3
Description MOSFET N-CH 30V 16A 8-SOIC
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6166) Minimum order quantity(1)
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Technical parameters/dissipated power: 2.5W (Ta), 4.45W (Tc)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 1595pF @15V(Vds)

Technical parameters/dissipated power (Max): 2.5W (Ta), 4.45W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4174DY-T1-GE3 SI4174DY-T1-GE3 Vishay Siliconix 功能相似 SOIC-8
MOSFET N-CH 30V 17A 8-SOIC
PDF
SI4174DY-T1-GE3 SI4174DY-T1-GE3 VISHAY 功能相似 SOIC-8
MOSFET N-CH 30V 17A 8-SOIC
PDF

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