Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Ta), 6.25W (Tc)
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/Input capacitance (Ciss): 950pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 6.25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5424DC-T1-E3
|
Vishay Siliconix | 功能相似 | 1206 |
Trans MOSFET N-CH 30V 6A 8Pin Chip FET T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review