Technical parameters/drain source resistance: 0.085 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.90 A
Technical parameters/thermal resistance: 90℃/W (RθJA)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/length: 3.1 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5902BDC-T1-GE3
|
VISHAY | 类似代替 | SMD-8 |
SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor, 3.7A, 30V, 8Pin 1206 ChipFET
|
||
SI5902BDC-T1-GE3
|
Vishay Siliconix | 类似代替 | SMD-8 |
SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor, 3.7A, 30V, 8Pin 1206 ChipFET
|
||
SI5902DC-T1
|
VISHAY | 功能相似 | CHIP |
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8
|
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