Technical parameters/drain source resistance: 0.11 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): -2.70 A
Technical parameters/thermal resistance: 0.11℃/W (RθJA)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1206
External dimensions/length: 3.1 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: 1206
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5933CDC-T1-GE3
|
VISHAY | 类似代替 | 1206 |
SI5933CDC-T1-GE3 Dual P-channel MOSFET Transistor, 3A, 20V, 8Pin 1206 ChipFET
|
||
SI5933CDC-T1-GE3
|
Vishay Siliconix | 类似代替 | SMD-8 |
SI5933CDC-T1-GE3 Dual P-channel MOSFET Transistor, 3A, 20V, 8Pin 1206 ChipFET
|
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