Technical parameters/drain source resistance: 72 mΩ
Technical parameters/dissipated power: 3.2W (Ta), 19.8W (Tc)
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 665pF @15V(Vds)
Technical parameters/dissipated power (Max): 3.2W (Ta), 19.8W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/packaging: 1212
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7308DN-T1-GE3
|
Vishay Intertechnology | 类似代替 | 1212-8 |
Si7308DN Series N-Channel 60V 58mOhms SMT Power Mosfet - PowerPAK 1212-8
|
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