Technical parameters/drain source resistance: 27.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 830 mW
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/rated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/length: 4.4 mm
External dimensions/width: 3 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review