Technical parameters/dissipated power: 1.9W (Ta)
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7463DP-T1-GE3
|
Vishay Intertechnology | 完全替代 | SO-8 |
MOSFET P-CH 40V 11A PPAK SO-8
|
||
SI7463DP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET P-CH 40V 11A PPAK SO-8
|
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