Technical parameters/drain source resistance: 2.9 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 34.6A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 7150pF @15V(Vds)
Technical parameters/rated power (Max): 104 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7742DP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 60A PPAK SO-8
|
|||
|
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 60A PPAK SO-8
|
||
SIR788DP-T1-GE3
|
VISHAY | 类似代替 | SOP-8 |
MOSFET N-CH 30V 60A SO-8
|
||
SIR788DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET N-CH 30V 60A SO-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review