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Model SI7980DP-T1-GE3
Description Dual N-Channel 20-V (DS) MOSFET with Schottky Diode
Product QR code
Brand: VISHAY
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.6  yuan 5.6yuan
10+:
$ 6.7224
100+:
$ 6.3863
500+:
$ 6.1622
1000+:
$ 6.1510
2000+:
$ 6.1062
5000+:
$ 6.0502
7500+:
$ 6.0053
10000+:
$ 5.9829
Quantity
10+
100+
500+
1000+
2000+
Price
$6.7224
$6.3863
$6.1622
$6.1510
$6.1062
Price $ 6.7224 $ 6.3863 $ 6.1622 $ 6.1510 $ 6.1062
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9267) Minimum order quantity(10)
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Technical parameters/drain source resistance: 22 mΩ

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 3.4 W

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 8.00 A

Technical parameters/rise time: 18 ns

Technical parameters/Input capacitance (Ciss): 1010pF @10V(Vds)

Technical parameters/rated power (Max): 3.1W, 3.4W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3400 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7980DP-T1-E3 SI7980DP-T1-E3 Vishay Siliconix 完全替代 SO-8
MOSFET 2N-CH 20V 8A PPAK SO-8
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