Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.3A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 功能相似 | SOP |
P沟道逻辑电平的PowerTrench MOSFET P-Channel Logic Level PowerTrench MOSFET
|
||
|
|
Vishay Siliconix | 功能相似 | SOT |
P沟道逻辑电平的PowerTrench MOSFET P-Channel Logic Level PowerTrench MOSFET
|
||
SI9435DY
|
ON Semiconductor | 功能相似 | SOIC-8 |
P沟道逻辑电平的PowerTrench MOSFET P-Channel Logic Level PowerTrench MOSFET
|
||
SI9435DY
|
Vishay Semiconductor | 功能相似 |
P沟道逻辑电平的PowerTrench MOSFET P-Channel Logic Level PowerTrench MOSFET
|
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