Technical parameters/drain source resistance: 0.024 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 6.5 W
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70
External dimensions/length: 2.15 mm
External dimensions/width: 2.15 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: SC-70
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIA910EDJ-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
Dual N-Channel 12V 28mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L
|
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