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Model SIA436DJ-T1-GE3
Description VISHAY SIA436DJ-T1-GE3 Transistor, MOSFET, N-channel, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV
Product QR code
Brand: Vishay Semiconductor
Packaging SC-70
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.69  yuan 1.69yuan
5+:
$ 2.2856
25+:
$ 2.1163
50+:
$ 1.9977
100+:
$ 1.9470
500+:
$ 1.9131
2500+:
$ 1.8708
5000+:
$ 1.8538
10000+:
$ 1.8284
Quantity
5+
25+
50+
100+
500+
Price
$2.2856
$2.1163
$1.9977
$1.9470
$1.9131
Price $ 2.2856 $ 2.1163 $ 1.9977 $ 1.9470 $ 1.9131
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4605) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.0078 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 19 W

Technical parameters/threshold voltage: 350 mV

Technical parameters/drain source voltage (Vds): 8 V

Technical parameters/Input capacitance (Ciss): 1508pF @4V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 19 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-70

External dimensions/length: 1.7 mm

External dimensions/width: 1.7 mm

External dimensions/height: 0.8 mm

External dimensions/packaging: SC-70

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIA414DJ-T1-GE3 SIA414DJ-T1-GE3 Vishay Siliconix 类似代替 SC-70-6
VISHAY SIA414DJ-T1-GE3 晶体管, MOSFET, N沟道, 12 A, 8 V, 0.009 ohm, 4.5 V, 800 mV
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