Technical parameters/dissipated power: 1800 mW
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 345pF @10V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70
External dimensions/height: 0.75 mm
External dimensions/packaging: SC-70
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIA911DJ-T1-E3
|
VISHAY | 类似代替 | SC-70 |
MOSFET DUAL P-CH 20V SC70-6
|
||
SIA911DJ-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET DUAL P-CH 20V SC70-6
|
|||
|
|
VISHAY | 类似代替 | SC-70 |
MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
|
||
SIA911DJ-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
|
||
SIA911EDJ-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 2P-CH 20V 4.5A SC70-6
|
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