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Model SIB414DK-T1-GE3
Description MOSFET N-CH 8V 9A PPAK SC75-6
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Brand: Vishay Siliconix
Packaging SC-75-6L
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1342) Minimum order quantity(1)
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Technical parameters/dissipated power: 2.4W (Ta), 13W (Tc)

Technical parameters/drain source voltage (Vds): 8 V

Technical parameters/Input capacitance (Ciss): 732pF @4V(Vds)

Technical parameters/dissipated power (Max): 2.4W (Ta), 13W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SC-75-6L

External dimensions/packaging: SC-75-6L

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIB404DK-T1-GE3 SIB404DK-T1-GE3 VISHAY 功能相似 SC-75-6L
MOSFET N-CH 12V 9A SC-75-6L
PDF
SIB404DK-T1-GE3 SIB404DK-T1-GE3 Vishay Siliconix 功能相似 SC-75-6L
MOSFET N-CH 12V 9A SC-75-6L
PDF
SIB404DK-T1-GE3 SIB404DK-T1-GE3 Vishay Intertechnology 功能相似 SC-75
MOSFET N-CH 12V 9A SC-75-6L
PDF

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