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Model SIHB12N50E-GE3
Description Field effect transistor, MOSFET, N-channel, 500V, 10.5A, TO-263-3
Product QR code
Brand: VISHAY
Packaging TO-252-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
3.92  yuan 3.92yuan
5+:
$ 5.2866
25+:
$ 4.8950
50+:
$ 4.6209
100+:
$ 4.5034
500+:
$ 4.4251
2500+:
$ 4.3272
5000+:
$ 4.2880
10000+:
$ 4.2293
Quantity
5+
25+
50+
100+
500+
Price
$5.2866
$4.8950
$4.6209
$4.5034
$4.4251
Price $ 5.2866 $ 4.8950 $ 4.6209 $ 4.5034 $ 4.4251
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1278) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.33 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 114 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/Continuous drain current (Ids): 12.5A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Other/Packaging Methods: Bulk

Other/Minimum Packaging: 2000

Other/Manufacturing Applications: Consumer electronics, LED lighting, industrial, portable equipment, power management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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