Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.5 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 78 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 680pF @100V(Vds)
Technical parameters/rated power (Max): 78 W
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 78000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 2000
Other/Manufacturing Applications: Motor drive and control, computer and computer peripherals, industrial, portable equipment, communication and networking, alternative energy, power management, lighting
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPD07N60C3
|
Infineon | 功能相似 | TO-252-3 |
Infineon CoolMOS™C3 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
SPD07N60C3ATMA1
|
Infineon | 功能相似 | TO-252-3 |
INFINEON SPD07N60C3ATMA1 功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review