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Model SIHF10N40D-E3
Description N Channel MOSFET, D-series high voltage, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: VISHAY
Packaging TO-220-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
4.82  yuan 4.82yuan
5+:
$ 6.5030
25+:
$ 6.0213
50+:
$ 5.6841
100+:
$ 5.5396
500+:
$ 5.4432
2500+:
$ 5.3228
5000+:
$ 5.2746
10000+:
$ 5.2024
Quantity
5+
25+
50+
100+
500+
Price
$6.5030
$6.0213
$5.6841
$5.5396
$5.4432
Price $ 6.5030 $ 6.0213 $ 5.6841 $ 5.5396 $ 5.4432
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1270) Minimum order quantity(5)
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Technical parameters/drain source resistance: 600 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 33 W

Technical parameters/drain source voltage (Vds): 400 V

Technical parameters/Continuous drain current (Ids): 10A

Technical parameters/rise time: 18 ns

Technical parameters/Input capacitance (Ciss): 526pF @100V(Vds)

Technical parameters/descent time: 14 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 33W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.63 mm

External dimensions/width: 4.83 mm

External dimensions/height: 9.8 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Bulk

Other/Minimum Packaging: 50

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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