Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.32 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 33 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 12A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 937pF @100V(Vds)
Technical parameters/rated power (Max): 147 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 33000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 50
Other/Manufacturing Applications: Alternative energy, lighting, motor drive and control, communication and networking, portable equipment, industrial, computer and computer peripherals, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF12N60E-GE3
|
Vishay Siliconix | 完全替代 | TO-220-3 |
VISHAY SIHF12N60E-GE3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
|
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