Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 278 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/rise time: 31 ns
Technical parameters/Input capacitance (Ciss): 3094pF @10V(Vds)
Technical parameters/descent time: 56 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 278 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.82 mm
External dimensions/packaging: TO-247-3
Other/Minimum Packaging: 500
Other/Manufacturing Applications: Industrial, consumer electronics, portable devices, power management
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH21N50F
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS RF IXFH21N50F 晶体管, 射频FET, 500 V, 21 A, 300 W, 500 kHz, TO-247AD
|
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