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Model SIHB23N60E-GE3
Description Transistor, MOSFET, N-channel, 23 A, 600 V, 0.132 ohm, 10 V
Product QR code
Brand: VISHAY
Packaging TO-263-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
13.91  yuan 13.91yuan
5+:
$ 16.2782
50+:
$ 15.5826
200+:
$ 15.1930
500+:
$ 15.0956
1000+:
$ 14.9982
2500+:
$ 14.8869
5000+:
$ 14.8173
7500+:
$ 14.7478
Quantity
5+
50+
200+
500+
1000+
Price
$16.2782
$15.5826
$15.1930
$15.0956
$14.9982
Price $ 16.2782 $ 15.5826 $ 15.1930 $ 15.0956 $ 14.9982
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7754) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.132 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 227 W

Technical parameters/threshold voltage: 2V ~ 4V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 23A

Technical parameters/rise time: 38 ns

Technical parameters/Input capacitance (Ciss): 2418pF @100V(Vds)

Technical parameters/descent time: 34 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 227000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Other/Minimum Packaging: 2000

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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