Technical parameters/drain source resistance: 600 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 10A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP10N40D-GE3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 400V 10A 3Pin(3+Tab) TO-220AB
|
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