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Model SIZ920DT-T1-GE3
Description Dual N-channel MOSFET PowerPAIR ®， Compared to two discrete components, Vishay Semiconductor's high side and low side MOSFETs are located in a compact package, while still achieving low on resistance and high current. ###MOSFET transistor, Vishay Semiconductor
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Brand: VISHAY
Packaging WDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.53  yuan 7.53yuan
10+:
$ 9.0408
100+:
$ 8.5888
500+:
$ 8.2874
1000+:
$ 8.2723
2000+:
$ 8.2121
5000+:
$ 8.1367
7500+:
$ 8.0764
10000+:
$ 8.0463
Quantity
10+
100+
500+
1000+
2000+
Price
$9.0408
$8.5888
$8.2874
$8.2723
$8.2121
Price $ 9.0408 $ 8.5888 $ 8.2874 $ 8.2723 $ 8.2121
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2400) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0059 Ω

Technical parameters/polarity: Dual N

Technical parameters/dissipated power: 100 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 40A

Technical parameters/Input capacitance (Ciss): 1260pF @15V(Vds)

Technical parameters/rated power (Max): 39W, 100W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 39 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: WDFN-8

External dimensions/length: 5.1 mm

External dimensions/width: 6.1 mm

External dimensions/height: 0.8 mm

External dimensions/packaging: WDFN-8

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 3000

Compliant with standards/RoHS standards:

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