Technical parameters/working voltage: 36 V
Technical parameters/breakdown voltage: 40 V
Technical parameters/clamp voltage: 58.1 V
Technical parameters/peak pulse power: 3600 W
Technical parameters/minimum reverse breakdown voltage: 40 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-218AB
External dimensions/packaging: DO-218AB
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SM5S36AHE3/2D
|
Vishay Semiconductor | 完全替代 | DO-218AB |
Diode TVS Single Uni-Dir 36V 3.6kW 2Pin DO-218AB T/R
|
||
SM5S36AHE3/2D
|
VISHAY | 完全替代 | DO-218AB |
Diode TVS Single Uni-Dir 36V 3.6kW 2Pin DO-218AB T/R
|
||
SM5S36AHE3/2E
|
Vishay Semiconductor | 完全替代 | DO-218AB |
Diode TVS Single Uni-Dir 36V 3.6kW 2Pin DO-218AB T/R
|
||
|
|
VISHAY | 完全替代 | DO-218AB |
Diode TVS Single Uni-Dir 36V 3.6kW 2Pin DO-218AB T/R
|
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