Technical parameters/clamp voltage: 58.1 V
Technical parameters/Maximum reverse voltage (Vrrm): 36V
Technical parameters/maximum reverse breakdown voltage: 40 V
Technical parameters/peak pulse power: 800 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Other/Minimum Packaging: 750
Compliant with standards/RoHS standards: Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMB8J36CA-E3/52
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 36V 800W 2Pin SMB T/R
|
||
SMB8J36CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 36V 800W 2Pin SMB T/R
|
||
SMB8J36CA-M3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 36V 800W 2Pin SMB T/R
|
||
SMB8J36CAHE3/5B
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 36V 800W 2Pin SMB T/R
|
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