Technical parameters/peak pulse power: 1000 W
Technical parameters/minimum reverse breakdown voltage: 6.4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMB10J5.0A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
TRANSZORB® 瞬态电压抑制器表面安装单向 1000W,SMB10J 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMB10J5.0A-E3/52
|
Vishay Siliconix | 完全替代 |
TRANSZORB® 瞬态电压抑制器表面安装单向 1000W,SMB10J 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
|||
SMB10J5.0A-E3/52
|
VISHAY | 完全替代 | SMB |
TRANSZORB® 瞬态电压抑制器表面安装单向 1000W,SMB10J 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMB10J5.0A-E3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
高功率密度表面贴装TRANSZORB®瞬态电压抑制器 High Power Density Surface Mount TRANSZORB® Transient Voltage Suppressors
|
||
SMB10J5.0AHE3/52
|
Vishay Semiconductor | 类似代替 | DO-214AA |
高功率密度表面贴装TRANSZORB®瞬态电压抑制器 High Power Density Surface Mount TRANSZORB® Transient Voltage Suppressors
|
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