Technical parameters/working voltage: 170 V
Technical parameters/breakdown voltage: 189 V
Technical parameters/clamp voltage: 275 V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 189 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB-2
External dimensions/length: 7.11 mm
External dimensions/packaging: DO-214AB-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMCJ170CA-E3/57T
|
Vishay Semiconductor | 类似代替 | DO-214AB |
TRANSZORB® 瞬态电压抑制器表面安装双向 1500W,SMCJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMCJ170CA-E3/57T
|
Vishay Siliconix | 类似代替 |
TRANSZORB® 瞬态电压抑制器表面安装双向 1500W,SMCJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
|||
SMCJ170CA-E3/57T
|
VISHAY | 类似代替 | DO-214AB |
TRANSZORB® 瞬态电压抑制器表面安装双向 1500W,SMCJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMCJ170CA-M3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB-2 |
ESD 抑制器/TVS 二极管 1.5KW,170V 5%,BIDIR,SMC TVS
|
||
SMCJ170CAHE3/9AT
|
Vishay Semiconductor | 类似代替 | DO-214AB |
Diode TVS Single Bi-Dir 170V 1.5kW 2Pin SMC T/R
|
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