Technical parameters/clamp voltage: 13.6 V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 8.89 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMCJ8.0A-E3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 8V 1.5kW 2Pin SMC T/R
|
||
SMCJ8.0A-M3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 8V 1.5kW 2Pin SMC T/R
|
||
SMCJ8.0A-M3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 8V 1.5kW 2Pin SMC T/R
|
||
|
|
VISHAY | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 8V 1.5kW 2Pin SMC T/R
|
||
SMCJ8.0AHE3/57T
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 8V 1.5kW 2Pin SMC T/R
|
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