Technical parameters/dissipated power: 830 mW
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Input capacitance (Ciss): 25pF @10V(Vds)
Technical parameters/rated power (Max): 830 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 830 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 | 3 |
MOS(场效应管)/BSN20
|
||
BSN20
|
SK Hynix | 功能相似 | SOT-23-3 |
MOS(场效应管)/BSN20
|
||
BSN20
|
SHIKUES | 功能相似 | SOT-23-3 |
MOS(场效应管)/BSN20
|
||
BSN20
|
Philips | 功能相似 | TO-236 |
MOS(场效应管)/BSN20
|
||
BSN20
|
NXP | 功能相似 | SOT-23-3 |
MOS(场效应管)/BSN20
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review