Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 240 W
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 24.3A
Technical parameters/rise time: 21 ns
Technical parameters/Input capacitance (Ciss): 3000pF @25V(Vds)
Technical parameters/rated power (Max): 240 W
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 240W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP24N60C3HKSA1
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Infineon | 类似代替 | TO-220-3 |
Infineon CoolMOS C3 系列 Si N沟道 MOSFET SPP24N60C3HKSA1, 24.3 A, Vds=650 V, 3引脚 TO-220封装
|
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