Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.016 Ω
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQD30N05-20L_GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 55V 30A TO252
|
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SQD30N05-20L_GE3
|
VISHAY | 功能相似 | TO-252-3 |
MOSFET N-CH 55V 30A TO252
|
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