Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/drain source resistance: 130 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/leakage source breakdown voltage: 50.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rated power (Max): 2 W
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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