Technical parameters/power supply voltage (DC): 2.70V (min)
Technical parameters/working voltage: 2.7V ~ 3.6V
Technical parameters/number of pins: 8
Technical parameters/clock frequency: 80 MHz
Technical parameters/access time: 80 ns
Technical parameters/memory capacity: 500000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5.4 mm
External dimensions/height: 1.91 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Other/Manufacturing Applications: Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ETC2 | 功能相似 |
Adesto ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
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SST25VF040B-50-4I-SAF
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Microchip | 类似代替 | SOIC-8 |
SST25VF040B 串行 SPI SuperFlash® 存储器 ### 闪存,Microchip
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SST25VF040B-80-4I-SAE
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Silicon Strorage Technology | 完全替代 | SOIC8 |
MICROCHIP SST25VF040B-80-4I-SAE 闪存, 4 Mbit, 512K x 8位, 80 MHz, 串行, SPI, SOIC, 8 引脚
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SST25VF040B-80-4I-SAE
|
Microchip | 完全替代 | SOIC-8 |
MICROCHIP SST25VF040B-80-4I-SAE 闪存, 4 Mbit, 512K x 8位, 80 MHz, 串行, SPI, SOIC, 8 引脚
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||
SST25VF040B-80-4I-SAE
|
Silicon Storage Tech | 完全替代 | SOIC |
MICROCHIP SST25VF040B-80-4I-SAE 闪存, 4 Mbit, 512K x 8位, 80 MHz, 串行, SPI, SOIC, 8 引脚
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