Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage of gate source: 25 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NXP | 功能相似 | SOT-23 |
N-channel junction FETs
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Philips | 功能相似 |
N-channel junction FETs
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PMBFJ110,215
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NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ110,215 晶体管, JFET, JFET, -25 V, 10 mA, -500 mV, SOT-23
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