Technical parameters/polarity: NPN
Technical parameters/dissipated power: 4 W
Technical parameters/breakdown voltage (collector emitter): 35 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 500 @500mA, 4V
Technical parameters/rated power (Max): 4 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 4 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 10
Encapsulation parameters/Encapsulation: SIP-10
External dimensions/packaging: SIP-10
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STA413A
|
Allegro MicroSystems | 功能相似 |
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, STA, 10 PIN
|
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STA413A
|
Sanken Electric | 功能相似 | SIP-10 |
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, STA, 10 PIN
|
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