Technical parameters/dissipated power: 600 mW
Technical parameters/breakdown voltage (collector emitter): 4.5 V
Technical parameters/gain: 15 dB
Technical parameters/minimum current amplification factor (hFE): 160 @160mA, 4V
Technical parameters/rated power (Max): 600 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-343
External dimensions/packaging: SOT-343
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
START499TR
|
ST Microelectronics | 功能相似 | SOT-323-4 |
NPN硅晶体管RF NPN Silicon RF Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review