Technical parameters/drain source resistance: 32.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 24.0 A
Technical parameters/rise time: 122 ns
Technical parameters/Input capacitance (Ciss): 1670pF @25V(Vds)
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.4 mm
External dimensions/height: 7.2 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review